The drift waves in infinite layered periodic structures placed into an external electric field are considered in the work. We investigate the structure composed of electron and hole semiconductors. It is assumed that the thickness of layers less than length of electromagnetic wave. It is shown that drift waves in such structure can propagate on the angle to the direction of current. The properties of waves are determined by the direction of propagation and thicknesses of layers. The instability increments for drift waves are investigated.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Investigation of drift waves in semiconducting multilayered structure


    Beteiligte:
    Bulgakov, A.A. (Autor:in) / Shramkova, O.V. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    884142 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    MC5-15 Investigation of Drift Waves In Semiconducting Multilayered Structure

    Shramkova, O. V. / Bulgakov, A. A. | British Library Conference Proceedings | 2005


    Transport properties of drift waves

    Rogister, André / Hasselberg, Günter / Waelbroeck, Frano̧is | TIBKAT | 1983


    Sensitivity of Homogeneity Mapping of Semiconducting Wafer Using Millimeter Waves

    Kancleris, Z. / Laurinavicius, A. / Anbinderis, T. | British Library Online Contents | 2004


    Analysis of multilayered hologram properties by coupled waves method [4425-76]

    Bobitski, Y. V. / Fitio, W. M. / SPIE | British Library Conference Proceedings | 2001


    Hydroelastic motions and drift forces of very large mobile offshore structure in waves

    Takagi, Ken / Noguchi, Jun / Kinoshita, Takeshi | Tema Archiv | 2005