Standard CMOS fabrication processes provide the means to realize the further development of back illuminated photodiode arrays for imaging systems. We have simulated crosstalk effects in a back illuminated CMOS compatible photodiode array, and compared this effect with that predicted for front illuminated arrays, using a two dimensional simulation model. It was found that the crosstalk in back illuminated arrays is generally greater than that for front illuminated arrays with identical structure, although this effect can be reduced by decreasing the thickness of the array. The n-well junction depth had little effect on the crosstalk predicted for the back illuminated case.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Modelling of device structure effects on electrical crosstalk in back illuminated CMOS compatible photodiodes


    Beteiligte:
    Hinckley, S. (Autor:in) / Jansz, P.V. (Autor:in) / Gluszak, E.A. (Autor:in) / Eshraghian, K. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    282833 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Modelling of Device Structure Effects on Electrical Cross-talk in Back Illuminated CMOS Compatible Photodiodes

    Hinckley, S. / Jansz, P. V. / Gluszak, E. A. et al. | British Library Conference Proceedings | 2002



    CMOS IMAGE SENSOR STRUCTURE WITH CROSSTALK IMPROVEMENT

    CHANG HUNG-CHANG / HSU CHUN-YUAN / YANG SZU-HUNG | Europäisches Patentamt | 2019

    Freier Zugriff


    CMOS DETECTORS Crosstalk challenges CMOS sensor design

    Tian, H. / Sun, Q. / Li, J. et al. | British Library Online Contents | 2005