A semiconductor device includes a semiconductor substrate, a device layer over the semiconductor substrate, a first color filter in a top surface of the device layer and adjacent to an edge of the device layer, and a second color filter in the top surface of the device layer. The second color filter has substantially the same thickness and the same color as the first color filter.


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    Titel :

    CMOS IMAGE SENSOR STRUCTURE WITH CROSSTALK IMPROVEMENT


    Beteiligte:
    CHANG HUNG-CHANG (Autor:in) / HSU CHUN-YUAN (Autor:in) / YANG SZU-HUNG (Autor:in)

    Erscheinungsdatum :

    2019-05-02


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    B64B LIGHTER-THAN-AIR AIRCRAFT , Luftfahrzeuge leichter als Luft



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