The III-V bulk and multiple quantum well (MQW) semiconductor electrooptic (EO) modulators have been successfully demonstrated with high modulation bandwidths. However, one of the drawbacks is a high switching voltage. This is mainly due to small EO coefficients of III-V semiconductor materials. Quantum dot (QD) devices have been predicted to be superior to bulk or MQW devices in optical nonlinearities and enhanced EO effects.


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    Titel :

    InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 /spl mu/m


    Beteiligte:
    Seong Hae Ok, (Autor:in) / Young Tae Byun, (Autor:in) / Chang Wan Son, (Autor:in) / Yon Tae Moon, (Autor:in) / Young Wan Choi, (Autor:in) / Jae Eung Oh, (Autor:in) / Seungho Lee, (Autor:in) / Young Min Jhon, (Autor:in) / Deok Ha Woo, (Autor:in) / Seok Lee, (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    720313 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55/spl mu/m

    Seong Hae Ok, / Young Tae Byun, / Chang Wan Son, et al. | IEEE | 2005



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