The III-V bulk and multiple quantum well (MQW) semiconductor electrooptic (EO) modulators have been successfully demonstrated with high modulation bandwidths. However, one of the drawbacks is a high switching voltage. This is mainly due to small EO coefficients of III-V semiconductor materials. Quantum dot (QD) devices have been predicted to be superior to bulk or MQW devices in optical nonlinearities and enhanced EO effects.
InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 /spl mu/m
2005-01-01
720313 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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