Summary form only given. Shallow ion implantation was used to study the effect of cap layer and implant temperature in the InP/InGaAs quantum well system. The greatest shifts occur at a dose of 1/spl times/10/sup 14/ cm/sup -2/, at 200 /spl deg/C for the InP capped sample and at room temperature for the InGaAs capped sample.
Influence of cap layer on interdiffusion in InP/InGaAs quantum wells
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 845-846 vol.2
2002-01-01
128270 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
ThX2 Influence of Cap Layer on Interdiffusion in InP/InGaAs Quantum Wells
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