Summary form only given. Shallow ion implantation was used to study the effect of cap layer and implant temperature in the InP/InGaAs quantum well system. The greatest shifts occur at a dose of 1/spl times/10/sup 14/ cm/sup -2/, at 200 /spl deg/C for the InP capped sample and at room temperature for the InGaAs capped sample.


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    Titel :

    Influence of cap layer on interdiffusion in InP/InGaAs quantum wells


    Beteiligte:
    Carmody, C. (Autor:in) / Tan, H.H. (Autor:in) / Jagadish, C. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    128270 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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