We demonstrated the synthesis of In(Ga)P nanowires on silicon using MOCVD at temperatures 350/spl sim/430 /spl deg/C. PL studies on the In(Ga)P nanowires indicate their tenability of optical properties in spite of a large lattice mismatch 8.07%.
Structural and optical studies of In(Ga)P nanowires grown on Si(111) substrates by MOCVD
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 3 ; 2140-2142 Vol. 3
2005-01-01
1794315 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Structural and Optical Studies of In(Ga)P Nanowires Grown on Si(111) Substrates by MOCVD
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