We demonstrated the synthesis of In(Ga)P nanowires on silicon using MOCVD at temperatures 350/spl sim/430 /spl deg/C. PL studies on the In(Ga)P nanowires indicate their tenability of optical properties in spite of a large lattice mismatch 8.07%.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Structural and optical studies of In(Ga)P nanowires grown on Si(111) substrates by MOCVD


    Beteiligte:
    Chuang, L.C. (Autor:in) / Kobayashi, N.P. (Autor:in) / Eui-Tae Kim, (Autor:in) / Chang-Hasnain, C. (Autor:in) / Kuykendall, T. (Autor:in) / Sirbuly, D. (Autor:in) / Yang, P. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    1794315 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Structural and Optical Studies of In(Ga)P Nanowires Grown on Si(111) Substrates by MOCVD

    Chang-Hasnain, C. | British Library Conference Proceedings | 2005


    Integrated Optical Structures Grown by Shadow Masked MOCVD

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    The Study of Optical Properties of Zn~1~-~xMn~xSe Thin Films Grown by MOCVD on GaAs Substrates

    Lu, S. L. / Yang, C. L. / Dai, J. M. et al. | British Library Conference Proceedings | 2002


    Fractional-Layer Superlattices Grown by MOCVD

    Fukui, T. | British Library Online Contents | 1993


    MOCVD grown solar-blind photodetector arrays

    Uttiya Chowdhury, / Collins, C.J. / Wong, M.M. et al. | IEEE | 2003