A detailed study of the InGaAsP-InP 2D-lattice MQW laser has been undertaken. Characterisation of the optical field intensity as a function of distance along the device cavity has shown that etching significantly alters the optical properties of the waveguide. A high value of coupling coefficient is obtained, with K/sub g/ >250cm/sup -1/. Modelling suggests that this high value is consistent with the mode-hop free single-mode emission found to hold in the etched device even under large-signal modulation at 10 Gb/s.


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    Titel :

    Investigation of 2D-lattice distributed reflector lasers


    Beteiligte:
    Sargent, L.J. (Autor:in) / Massara, A.B. (Autor:in) / Gioannini, M. (Autor:in) / Yong, J. (Autor:in) / Heard, P.J. (Autor:in) / Penty, R.V. (Autor:in) / White, I.H. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    183210 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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