We demonstrate an improved laterally oxidized long wavelength (1.55-/spl mu/m) InGaAsP vertical cavity DBR QW laser. The devices exhibit the first submilliamp threshold current as well as the highest reported CW (64/spl deg/C) and pulsed (85/spl deg/C) operating temperatures.
Submilliamp long wavelength vertical cavity lasers
01.01.1996
162879 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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