We demonstrate an improved laterally oxidized long wavelength (1.55-/spl mu/m) InGaAsP vertical cavity DBR QW laser. The devices exhibit the first submilliamp threshold current as well as the highest reported CW (64/spl deg/C) and pulsed (85/spl deg/C) operating temperatures.
Submilliamp long wavelength vertical cavity lasers
1996-01-01
162879 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1996
|GaInNAs long wavelength vertical cavity lasers
IEEE | 2001
|Submilliamp Long Wavelength Vertical Cavity Lasers
British Library Conference Proceedings | 1996
|GaInNAs Long Wavelength Vertical Cavity Lasers
British Library Conference Proceedings | 2001
|