We demonstrate an improved laterally oxidized long wavelength (1.55-/spl mu/m) InGaAsP vertical cavity DBR QW laser. The devices exhibit the first submilliamp threshold current as well as the highest reported CW (64/spl deg/C) and pulsed (85/spl deg/C) operating temperatures.


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    Titel :

    Submilliamp long wavelength vertical cavity lasers


    Beteiligte:
    Margalit, N.M. (Autor:in) / Babic, D.I. (Autor:in) / Streubel, K. (Autor:in) / Mirin, R.P. (Autor:in) / Bowers, J.E. (Autor:in) / Hu, E.L. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    162879 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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