The temperature effects on thermal resistance measurement of power modules when applying the transient dual interface measurement method proposed in JESD51-14 is studied in this paper. Simulation and experiment results indicate that the junction temperature should be consistent of two transient cooling curves with and without thermal grease, otherwise the two thermal impedance curves will separate prematurely that result in a lower valuation even an incorrect one of junction-to-case thermal resistance, which is especially obvious for Insulated Gate Bipolar Transistor (IGBT).


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    Titel :

    Temperature effects on the transient measurement of the junction-to-case thermal resistance of IGBTs


    Beteiligte:
    Zhijie Qiu, (Autor:in) / Jin Zhang, (Autor:in) / Jinlei Meng, (Autor:in) / Xuhui Wen, (Autor:in)


    Erscheinungsdatum :

    2014-08-01


    Format / Umfang :

    400188 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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