We improved the performance of InGaAsP/InGaAs 1.55 /spl mu/m multi-quantum well laser diodes with differently highly p-doped layers in the two-step separate confinement heterostructure (SCH) by inserting additional InGaAsP layer in n-SCH, which makes asymmetric field distribution and reduces the optical loss in highly p-doped regions. To reduce the inevitable optical loss that maybe due to high-level doping, we inserted additional 100 nm InGaAsP layer in the 1st n-SCH, which shifts the field distribution from highly p-doped regions with high loss to intrinsic or n-doped region with relatively low loss, and improved the light-current characteristics.


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    Titel :

    The study on InGaAsP/InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure


    Beteiligte:
    Heo, D. (Autor:in) / Bae, H.C. (Autor:in) / Lee, J.I. (Autor:in) / Jeong, J. (Autor:in) / Han, I.K. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    63744 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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