A monolithic semiconductor laser array on a p-type substrate with low threshold current and uniform characteristics, is required for parallel high-speed optical interconnections. The calculated results indicate that the threshold current should be lower than about 3.0, 1.4, and 0.7 mA at 25/spl deg/C for 200 and 500 Mbit/s and 1 Gbit/s applications, respectively, to get an error-free transmission at 850 /spl deg/C with a shorter turn-on delay time. This paper fully reviews the ultralow threshold properties of our 1.3 /spl mu/m strained-multi-quantum-well (MQW) laser.
Ultralow threshold 1.3-/spl mu/m strained-QW lasers for high-speed optical interconnections
01.01.1995
193567 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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