A monolithic semiconductor laser array on a p-type substrate with low threshold current and uniform characteristics, is required for parallel high-speed optical interconnections. The calculated results indicate that the threshold current should be lower than about 3.0, 1.4, and 0.7 mA at 25/spl deg/C for 200 and 500 Mbit/s and 1 Gbit/s applications, respectively, to get an error-free transmission at 850 /spl deg/C with a shorter turn-on delay time. This paper fully reviews the ultralow threshold properties of our 1.3 /spl mu/m strained-multi-quantum-well (MQW) laser.


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    Titel :

    Ultralow threshold 1.3-/spl mu/m strained-QW lasers for high-speed optical interconnections


    Beteiligte:
    Uomi, K. (Autor:in) / Tsuchiya, T. (Autor:in) / Kawano, T. (Autor:in) / Nakahara, K. (Autor:in) / Niwa, A. (Autor:in) / Oishi, A. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    193567 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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