New THz chip solid-state detectors and sources are waited for many applications. The idea of new sources and detectors, based on the oscillations of bidimensional plasma, was theoretically and experimentally demonstrated. We present technological process of nanometric devices dedicated to THz emission. In this structure, a MIM gate-source capacitance is integrated to HEMT to achieve the boundary condition of plasma wave generation and to keep possible the gate biasing, necessary for frequency tuning. High electron mobility material like InAlAs/GaInAs heterostructure is used otherwise the plasma wave is dumped by electron scattering. Electrical and THz measurements are realized.


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    Titel :

    Plasma Wave HEMTs for THz applications


    Beteiligte:
    Shchepetov, A. (Autor:in) / Roelens, Y. (Autor:in) / Bollaert, S. (Autor:in) / Cappy, A. (Autor:in) / Dyakonova, N. (Autor:in) / Knap, W. (Autor:in) / Lusakowski, J. (Autor:in) / Teppe, F. (Autor:in) / El Fatimy, A. (Autor:in) / Dyakonov, M. (Autor:in)


    Erscheinungsdatum :

    01.09.2006


    Format / Umfang :

    1313204 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    Millimetre-Wave Performance of InP and Metamorphic GaAs HEMTs (Invited Paper)

    Thayne, I. G. / Edgar, D. L. / European Space Agency | British Library Conference Proceedings | 2000


    Current Collapse Simulation of GaN HEMTs

    Hu, W.D. / Chen, X.S. / Quan, Z.J. et al. | IEEE | 2006


    Development of GaAs Pseudomorphic HEMTs at W-Bnd

    Zhu, G. et al | British Library Conference Proceedings | 1996