Using a two-dimensional simulator, current collapse effect is simulated in GaN HEMTs. Dynamic picture of trapping of hot electron under gate pulse is discussed. The trapped charge may accumulate under punch-off gate voltage at gate edge drain side due to the large electric field strain. Self-heating effect is a consequence of the current collapse.
Current Collapse Simulation of GaN HEMTs
01.09.2006
1265756 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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