In this paper we introduce new efficient method of light reflectance modulation that is the modulation of energy of hot electrons or holes by longitudinal current that flows along the structure. The experiment was performed with molecular beam epitaxy (MBE) grown GaAs/AlGaAs heterostructure with strained InGaAs quantum well. Thus the longitudinal current modulated light reflectance (LCMR) method introduced in this paper is evidently more efficient than traditional photoreflectance and photoluminescence methods.


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    Titel :

    Longitudinal current modulated light reflectance spectroscopy of high power semiconductor laser heterostructures


    Beteiligte:
    Ryabushkin, O.A. (Autor:in) / Romanyuk, A.Y. (Autor:in) / Chernikov, M.A. (Autor:in) / Sotnikov, A.E. (Autor:in) / Trubenko, P. (Autor:in) / Moshegov, N. (Autor:in) / Ovtchinnikov, A. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    86297 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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