In this paper we introduce new efficient method of light reflectance modulation that is the modulation of energy of hot electrons or holes by longitudinal current that flows along the structure. The experiment was performed with molecular beam epitaxy (MBE) grown GaAs/AlGaAs heterostructure with strained InGaAs quantum well. Thus the longitudinal current modulated light reflectance (LCMR) method introduced in this paper is evidently more efficient than traditional photoreflectance and photoluminescence methods.
Longitudinal current modulated light reflectance spectroscopy of high power semiconductor laser heterostructures
01.01.2003
86297 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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