In this work we introduce new effective method of modulation spectroscopy for investigation of high power semiconductor laser heterostructures and compare it with traditional photoreflectance and photoluminescence methods. We present experimental results for AlGaAs/GaAs semiconductor laser heterostructure with strained InGaAs quantum well grown on n/sup +/-GaAs substrate.


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    Titel :

    Longitudinal current modulated light reflectance spectroscopy of semiconductor laser heterostructures


    Beteiligte:
    Ryabushkin, O.A. (Autor:in) / Romanyuk, A.Y. (Autor:in) / Chernikov, M.A. (Autor:in) / Sotnikov, A.E. (Autor:in) / Trubenko, P. (Autor:in) / Moshegov, N. (Autor:in) / Ovtchinnikov, A. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    153506 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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