In this paper, we propose a novel long-wavelength VCSEL with an oxidized AlAs confinement structure which is grown on an InP substrate. We expect the proposed structure will provide a threshold reduction and a high temperature operation of long wavelength VCSELs. We present some characteristics of AlAs oxidation on InP substrates and demonstrate GaInAs-AlGaInAs edge emitting lasers (/spl Lambda/=1.65 /spl mu/m) with the AlAs-oxide current confinement for the first time.


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    Titel :

    Proposal of an AlAs-oxide current confinement structure for GaInAs/AlGaInAs long wavelength surface emitting lasers


    Beteiligte:
    Ohmoki, N. (Autor:in) / Hatori, N. (Autor:in) / Mizutani, A. (Autor:in) / Koyama, F. (Autor:in) / Iga, K. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    197812 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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