This paper reported two reliable and economical methods that one is the using of spin on glass together with re-flowing photoresist to implement 0.4/spl sim/1.5-/spl mu/m U-gate HDCFETs, the other is to employ the wet etching rule to obtain the Sub-quarter-micrometer-like V-gate DCFETs. The measured transconductance available are 225, 250, 275, and 350 mS/mm for a V-gate, 1.5-/spl mu/m, 1.0-/spl mu/m and 0.6-/spl mu/m U-gate devices, respectively. The measured f/sub t/ (f/sub max/) at V/sub GS/=0 V and V/sub DS/=4 V are 22.5(33.5), 16(25), 9.7(20.5), and 7(14) GHz for a V-gate, 1.5-/spl mu/m, 1.0-/spl mu/m and 0.6-/spl mu/m U-gate devices.


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    Titel :

    Sub-quarter-micrometer-like V-gate pseudomorphic doped-channel FETs


    Beteiligte:
    Tan, S.W. (Autor:in) / Chen, W.T. (Autor:in) / Chu, M.Y. (Autor:in) / Lour, W.S. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    222396 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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