We study the carrier-envelope phase sensitivity of the inversion in a two-band semiconductor and the influence of rapid dephasing of higher-lying states. The application of this effect for constructing a solid-state phase detector is investigated.
Semiconductor-based carrier-envelope phase detector
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 3 pp. vol.1
2004-01-01
174217 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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