We report a dramatic increase in the light emitting efficiency of InGaN/GaN resulting from surface plasmon interaction between the quantum wells and evaporated silver layers, whereas no such enhancement was obtained from gold deposited samples.
Surface plasmon enhanced light emitting efficiencies of InGaN/GaN quantum wells
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
2004-01-01
120242 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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