We report an experimental study of the reflection of s- and p-polarized subpicosecond THz-radiation pulses from silicon. We propose silicon reflection switches for electron bunch length measurement via THz wake field diagnostics.
A femtosecond laser-activated silicon reflection switch for electron-beam bunch length measurements
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
01.01.2004
153667 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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