Efficient GHz silicon detectors in unmodified CMOS processes are attractive for dense optical interconnection to electronics. Using blue short pulses we demonstrate 50 ps rise time lateral P-I-N detectors in a commercial silicon-on-sapphire CMOS process.


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    Titel :

    Transit-time limited response from low capacitance CMOS photodetectors


    Beteiligte:
    Bhatnagar, A. (Autor:in) / Latif, S. (Autor:in) / Miller, D.A.B. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    131226 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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