Efficient GHz silicon detectors in unmodified CMOS processes are attractive for dense optical interconnection to electronics. Using blue short pulses we demonstrate 50 ps rise time lateral P-I-N detectors in a commercial silicon-on-sapphire CMOS process.
Transit-time limited response from low capacitance CMOS photodetectors
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 2 ; 2 pp. vol.2
2004-01-01
131226 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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