We present in this paper several different photodetector structures implemented with a conventional CMOS fabrication process that can be incorporated into optical data links and information processing systems. We investigate several detector structures using the 2-D materials simulation package MEDICI. The detector structure is evaluated by fabrication using an AMI 1.5 /spl mu/m CMOS process available through the MOSIS foundry service. When geometric and other structural differences are accounted for, the results indicate that the simulation adequately predicts photodetector operation under normal operating conditions.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Implementation of CMOS photodetectors in optoelectronic circuits


    Beteiligte:
    Bhadri, P. (Autor:in) / Mal, P. (Autor:in) / Konanki, S. (Autor:in) / Beyette, F.R.Jr. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    143875 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    ThG4 Implementation of CMOS Photodetectors in Optoelectronic Circuits

    IEEE | British Library Conference Proceedings | 2002


    8x8 arrays of VCSEL/CMOS and photodetectors: optoelectronic interconnects [3714-04]

    Pham, J. T. / Simonis, G. J. / Pamulapati, J. et al. | British Library Conference Proceedings | 1999


    Comparison of Sl/CMOS and GaAs MESFET Technologies for Analog Optoelectronic Circuits

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Comparison Of Si/CMOS And GaAs MESFET Technologies For Analog Optoelectronic Circuits

    Grot, A.C. / Psaltis, D. / Shenoy, K.V. et al. | IEEE | 1994


    Optoelectronic integrated circuits promise simplicity

    Lerner, E. J. | British Library Online Contents | 1997