We demonstrate a thermal profiling technique for wafer-scale testing of optical distribution in photonic integrated circuits. The technique is used to quantify the absorption coefficient of a subthreshold diode laser for varying operating conditions.


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    Titel :

    Wafer scale profiling of photonic integrated circuits


    Beteiligte:
    Hudgings, J.A. (Autor:in) / Pipe, K.P. (Autor:in) / Ram, R.J. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    192594 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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