We have successfully demonstrated the CW operation of 1.55 /spl mu/m VCSEL consisting of a periodic gain structure of InAlGaAs/InGaAs quantum wells grown on the InAlGaAs/InAlAs/InP bottom mirror and SiO/sub 2//TiO/sub 2/ dielectric films as a top mirror. The entire structure was optically pumped using a YLF laser operating at 1.05 /spl mu/m. The light emission was obtained through the rear side of the wafer without antireflection coating. The CW lasing characteristics were explored at various temperatures.


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    Titel :

    Optically pumped continuous-wave operation of InAlGaAs/InAlAs/InP based 1.55 /spl mu/m vertical-cavity surface-emitting laser with SiO/sub 2//TiO/sub 2/ dielectric mirror


    Beteiligte:
    Jong-Hyeob Baek, (Autor:in) / Won Seok Han, (Autor:in) / Hyung Koun Cho, (Autor:in) / Byeung Su Yoo, (Autor:in) / Bun Lee, (Autor:in) / In Hoon Choi, (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    152051 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch