We were able to extend the emission wavelength of highly strained GaInAs/GaAs SQWs over 1.2 /spl mu/m by employing a high growth rate of 9 /spl mu/m/h. We obtained the longest PL peak wavelength of 1.27 /spl mu/m. We also demonstrated a highly strained GaInAs/GaAs SQW stripe-laser. The lasing wavelength reached 1.23 /spl mu/m with a threshold current density of 1.7 kA/cm/sup 2/.


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    Titel :

    1.23 /spl mu/m long wavelength highly strained GaInAs/GaAs quantum well laser


    Beteiligte:
    Kondo, T. (Autor:in) / Arai, M. (Autor:in) / Onomura, A. (Autor:in) / Miyamoto, T. (Autor:in) / Koyama, F. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    110677 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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