A semiconductor device includes an N-type semiconductor substrate, a first epitaxial layer, a plurality of gate trenches disposed at intervals, a gate, an interlayer dielectric layer, a source, and a drain. The plurality of gate trenches are disposed at the first epitaxial layer. The gate includes a first gate and a second gate that are in contact with each other. The first gate is filled in the gate trench. The second gate is disposed on top of the first epitaxial layer. The interlayer dielectric layer covers a side that is of the gate and that is away from the semiconductor substrate, and has contact holes that extend in a second direction. The source is disposed on a side that is of the interlayer dielectric layer and that is away from the semiconductor substrate, and is in contact with the first epitaxial layer through the contact hole.
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, POWER CONVERSION CIRCUIT, AND VEHICLE
15.08.2024
Patent
Elektronische Ressource
Englisch
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