A semiconductor device of embodiments includes: a silicon carbide layer having a first face and a second face opposite to the first face, and including a p-type silicon carbide region in contact with the first face, a percentage of a first silicon atom among a plurality of silicon atoms present in a first layer as an uppermost layer being equal to or more than 90% and a site position of the first silicon atom being different from a site position of a silicon atom in a third layer from the first face and the same as a site position of a silicon atom in a fifth layer from the first face; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer including nitrogen.


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    Titel :

    SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR


    Beteiligte:
    SHIMIZU TATSUO (Autor:in)

    Erscheinungsdatum :

    08.02.2024


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B60R Fahrzeuge, Fahrzeugausstattung oder Fahrzeugteile, soweit nicht anderweitig vorgesehen , VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR






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