A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×1021 cm−3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a first position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×1018 cm−3 and a carbon concentration at the first position is equal to or less than 1×1018 cm−3, and a nitrogen concentration at a second position 1 nm away from the peak to the side of the silicon carbide layer is equal to or less than 1×1018 cm−3.


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    Titel :

    Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator


    Beteiligte:
    SHIMIZU TATSUO (Autor:in) / NAKABAYASHI YUKIO (Autor:in) / NISHIO JOHJI (Autor:in) / OTA CHIHARU (Autor:in) / ITO TOSHIHIDE (Autor:in)

    Erscheinungsdatum :

    19.12.2023


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B61C Lokomotiven , LOCOMOTIVES / B66B Aufzüge , ELEVATORS / H02P CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS , Steuern oder Regeln von elektrischen Motoren, elektrischen Generatoren, dynamoelektrischen Umformern / B60L PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES , Antrieb von elektrisch angetriebenen Fahrzeugen