A semiconductor device of an embodiment includes: a first trench in a silicon carbide layer and extending in a first direction; a second trench and a third trench located in a second direction orthogonal to the first direction with respect to the first trench and adjacent to each other in the first direction, n type first silicon carbide region, p type second silicon carbide region on the first silicon carbide region, n type third silicon carbide region on the second silicon carbide region, p type fourth silicon carbide region between the first silicon carbide region and the second trench, and p type fifth silicon carbide region located between the first silicon carbide region and the third trench; a gate electrode in the first trench; a first electrode; and a second electrode. A part of the first silicon carbide region is located between the second trench and the third trench.


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    Titel :

    SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR


    Beteiligte:
    TANAKA KATSUHISA (Autor:in) / IIJIMA RYOSUKE (Autor:in) / KYOGOKU SHINYA (Autor:in)

    Erscheinungsdatum :

    13.01.2022


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS , Anlagen zur Umformung von Wechselstrom in Wechselstrom, von Wechselstrom in Gleichstrom oder umgekehrt, oder von Gleichstrom in Gleichstrom und zur Verwendung in Netzen oder ähnlichen Stromversorgungssystemen / B66B Aufzüge , ELEVATORS / B60L PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES , Antrieb von elektrisch angetriebenen Fahrzeugen



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