A semiconductor device of an embodiment includes a first trench extending in a first direction in a silicon carbide layer; a second trench and a third trench adjacent to each other in the first direction; a first silicon carbide region of n type; a second silicon carbide region of p type on the first silicon carbide region; a third silicon carbide region of n type on the second silicon carbide region; a fourth silicon carbide region of p type between the first silicon carbide region and the second trench; a fifth silicon carbide region of p type between the first silicon carbide region and the third trench; a gate electrode in the first trench; a first electrode, part of which is in the second trench, the first electrode contacting the first silicon carbide region between the fourth silicon carbide region and the fifth silicon carbide region; and a second electrode.


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    Titel :

    SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR


    Beteiligte:
    TANAKA KATSUHISA (Autor:in) / IIJIMA RYOSUKE (Autor:in) / KIMOTO SHINICHI (Autor:in) / HARADA SHINSUKE (Autor:in)

    Erscheinungsdatum :

    13.01.2022


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS , Anlagen zur Umformung von Wechselstrom in Wechselstrom, von Wechselstrom in Gleichstrom oder umgekehrt, oder von Gleichstrom in Gleichstrom und zur Verwendung in Netzen oder ähnlichen Stromversorgungssystemen / B66B Aufzüge , ELEVATORS / B60L PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES , Antrieb von elektrisch angetriebenen Fahrzeugen



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