Silicon carbide is an ultra-high-temperature ceramic proposed for hypersonic flight applications. However, its use is limited at conditions where oxidation causes aggressive material degradation and a surface temperature “jump” phenomenon. Oxidation is a coupled process, depending on both boundary layer and surface chemistry. An equilibrium surface chemistry model for silicon carbide oxidation is coupled to a nonequilibrium computational fluid dynamics framework, accounting for gas–surface reactions, blowing of oxidation products, and a detailed surface energy balance. Boundary-layer analyses demonstrate a 20–40% increase in the chemical diffusive heating during passive-to-active transition, and predicted steady-state temperatures agree with experimental measurements within 3%. Simulated emission spectra show good qualitative agreement with spectra measured in high-enthalpy experiments.


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    Titel :

    Boundary-Layer Thermochemical Analysis During Passive and Active Oxidation of Silicon Carbide


    Beteiligte:
    Chen, Samuel Y. (Autor:in) / Boyd, Iain D. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.07.2020




    Medientyp :

    Aufsatz (Konferenz) , Aufsatz (Zeitschrift)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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