Radiation induced nonlinear degradation of transistor gain
NASA contractor report ; CR-1566
1970
Getr. Zählung
Ill., graph. Darst
Contract no. NAS 5-10443
Auch als: Document / Boeing Company ; D2-125680-3
Report
Englisch
Relationship Between Latchup And Transistor Current Gain
NTRS | 1989
|Photonic Transistor Design Principles for Switching Gain
British Library Online Contents | 2013
|Transistor design effects on radiation resistance
TIBKAT | 1968
|Transistor design effects on radiation resistance
TIBKAT | 1966
|