Formation of pn-junction with stable n-doping in graphene field effect transistors using e-beam irradiation
Optical materials ; 69 ; 254-258
2017-01-01
5 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC: | 535 |
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Influence of electron beam and ultraviolet irradiations on graphene field effect transistors
British Library Online Contents | 2017
|Influence of electron beam and ultraviolet irradiations on graphene field effect transistors
British Library Online Contents | 2017
|Influence of electron beam and ultraviolet irradiations on graphene field effect transistors
British Library Online Contents | 2017
|