Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa
OPTICAL AND QUANTUM ELECTRONICS ; 42 , 11-13 ; 747-754
2011-01-01
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC: | 537.5 |
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Loss reduction of deeply etched InP/InGaAsP waveguides by CBE regrowth
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