Design and Analysis of InGaN-GaN Modulation-Doped Field-Effect Transistors (MODFETs) for 90 GHz Operations
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES ; 22 ; 1495-1502
2001-01-01
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC: | 621.3612 |
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British Library Online Contents | 1998
|British Library Online Contents | 1996
|Analysis of quantum-wire MODFETs employing coupled well channels (Invited Paper) [3384-09]
British Library Conference Proceedings | 1998
|Analysis of Geometrical Magnetoresistance Al~0~.~3~5Ga~0~.~6~5N/GaN MODFETs
British Library Conference Proceedings | 2002
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