Influence of the Cap Layer Thickness on Photoluminescence Properties in Strained InGaAs/GaAs Single Quantum Wells
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES ; 15 , 10 ; 1643
1994-01-01
1643 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC: | 621.3612 |
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