Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Raman study of Epitaxial lateral Overgrowth of GaN on Patterned Sapphire Substrate


    Beteiligte:
    Kang, D.H. (Autor:in) / Song, J.C. (Autor:in) / Song, H. (Autor:in) / Kim, D.W. (Autor:in) / Lee, I.H. (Autor:in) / Santhakumar, K. (Autor:in) / Lee, C.R. (Autor:in) / Chua, S.-J.

    Kongress:

    SYMPOSIUM D, Semiconductor photonics: nano-structured materials and devices ; 2007 ; Singapore



    Erscheinungsdatum :

    2008-01-01


    Format / Umfang :

    3 pages


    Anmerkungen:

    Includes bibliographical references and index; Held as part of the International conference on materials for advanced technologies (ICMAT) 2007




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Lateral Epitaxial Overgrowth of and Defect Reduction in GaN Thin Films

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    High Quality and Thick GaN Substrate Epitaxially Grown by VPE Lateral Overgrowth

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate

    Sheng, Y. / Xia, C. S. / Simon Li, Z. M. et al. | British Library Online Contents | 2013


    Erratum to: Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate

    Xia, C. S. / Li, Z. M. / Sheng, Y. et al. | British Library Online Contents | 2015


    Metal organic vapor phase epitaxy of GaN and lateral overgrowth (Invited Paper)

    Beaumont, B. / Gibart, P. / Military University of Technology; Institute of Applied Physics | British Library Conference Proceedings | 1999