Near-contact vary-band layers as a means of suppressing the saturation of amplification in threshold CdHgTe photoconductive devices (photoresistors) [5126-42]
International conference; 17th, Photoelectronics and night vision devices ; 2002 ; Moscow
2003-01-01
7 pages
Aufsatz (Konferenz)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
New polymeric materials for designing photoresistors and photodetective assemblies based on CdHgTe
British Library Conference Proceedings | 1999
|DataCite | 1943
British Library Conference Proceedings | 2003
|Image merging device [5126-30]
British Library Conference Proceedings | 2003
|Calculations of photoelectric amplification coefficient in graded-band-gap photoresistors [3182-48]
British Library Conference Proceedings | 1997
|