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    Titel :

    New polymeric materials for designing photoresistors and photodetective assemblies based on CdHgTe



    Kongress:

    International scientific and engineering conference; 15th, Photoelectronics and night-vision devices ; 1998 ; Moscow



    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    3 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Near-contact vary-band layers as a means of suppressing the saturation of amplification in threshold CdHgTe photoconductive devices (photoresistors) [5126-42]

    Kholodnov, V. A. / Drugova, A. A. / Research, Development and Production Centre ORION (Russia) | British Library Conference Proceedings | 2003


    High-speed photodetectors and photodetective assemblies for receiving laser radiation in 0.3- to 11-mum spectral range [5126-24]

    Filachev, A. M. / Ponomaremko, V. P. / Taubkin, I. I. et al. | British Library Conference Proceedings | 2003


    Photocarrier extraction effect in thin variable-gap photoresistors [4454-37]

    Sokolovsky, B. S. / Pysarevsky, V. K. / Kovtun, R. M. et al. | British Library Conference Proceedings | 2001


    Advanced High Performance CdHgTe Multiplexed Arrays

    Baker, I. M. | British Library Online Contents | 1992


    Calculations of photoelectric amplification coefficient in graded-band-gap photoresistors [3182-48]

    Savitsky, V. G. / Sokolovsky, B. S. / Nemolovsky, A. V. et al. | British Library Conference Proceedings | 1997