Design, Fabrication and Characterisation of an InP Resonant Tunnelling Bipolar Transistor with Double Heterojunctions
Conference, Optoelectronic and microelectronic materials and devices; COMMAD 2002 ; 2002 ; Sydney, Australia
01.01.2002
4 pages
IEEE cat no 02EX601
Aufsatz (Konferenz)
Englisch
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