Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    TuY3 The Temperature Dependence of the Recomination Processes in 1.3mum GaInNAs-based Edge Emitting Lasers


    Beteiligte:

    Kongress:

    Annual meeting; 14th, IEEE; Lasers and Electro-Optics Society ; 2001 ; San Diego, CA



    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    2 pages


    Anmerkungen:

    IEEE cat no 01CH37242




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    OMVPE Grown 1.3mum GaInNAs Quantum Well Lasers

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2002


    Influence of Growth Temperature on Defect Density in 1.3mum GaInNAs-based Lasers

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004



    A Comparison of the Thermal Stability of InGaAsP, AlGaInAs and GaInNAs Quantum-Well Lasers for 1.3mum Operation

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2002