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    Titel :

    Surface and oxide narrow-gap semiconductor interface Rutherford backscattering method [4355-24]



    Kongress:

    International conference; 5th, Material science and material properties for infrared optoelectronics ; 2000 ; Kiev, Ukraine



    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    5 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Nr. 4355

    DataCite | 1929


    Chemical cutting process in narrow-gap semiconductors [4355-46]

    Kravetskii, M. Y. / Fomin, O. V. / SPIE- The International Society for Optical Engineering et al. | British Library Conference Proceedings | 2001


    Gap deep defect states in narrow-gap semiconductors [4355-29]

    Sizov, F. F. / Darchuk, S. D. / Golenkov, A. G. et al. | British Library Conference Proceedings | 2001


    Electron-positron annihilation in the narrow-gap semiconductor Hg~1~-~xCd~xTe [4355-25]

    Kokhanenko, A. P. / Korotaev, A. G. / Voitsekhovskii, A. V. et al. | British Library Conference Proceedings | 2001


    Enhancement of quantum efficiency of narrow-gap semiconductors infrared emission [4355-22]

    Gasan-zade, S. G. / Kollyuch, A. G. / Linnyk, L. F. et al. | British Library Conference Proceedings | 2001