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    Titel :

    Electro-optical investigations of strained InGaAs/GaAs double quantum well laser structures [3628-14]



    Kongress:

    Conference, In-plane semiconductor lasers III ; 1999 ; San Jose; CA



    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    9 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Polarization Dependent Electro-Absorption in InGaAs/GaAs Strained Multiple Quantum Well Modulator Grown on (110) GaAs

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    Nr. 3628

    DataCite | 1915


    High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]

    Hua, J. / Guan, X. / SPIE-The International Society for Optical Engineering | British Library Conference Proceedings | 1996


    0.98 m Wavelength InGaAs/GaAs/AlGaAs Strained Quantum-Well Laser Diodes with High Reliability

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Temperature behavior of unstrained (GaAs/AlGaAs) and strained (InGaAs/GaAs) quantum well bandgaps

    Balgos, M. H. / Afalla, J. P. / Vizcara, S. et al. | British Library Online Contents | 2015