Effect of pre-treatment of GaN substrate for homoepitaxial growth by rf MBE [4078-11]
Estimation of shallow-energy-level location in BaTiO~3 [4078-129]
Fabrication of a micromachined optical modulator using the CMOS process [4078-94]
Fabrication of diffractive optical elements using the CMOS process [4078-95]
Fabrications and characterizations of micromachined Fabry-Perot interferometers [4078-66]
Finite-element analysis of fiber shifts in fiber-solder-ferrule joints using AuSn solder [4078-98]
Finite-element analysis of solder joint strength in laser diode packaging [4078-97]
GaAs-based long-wavelength traveling-wave photodetector [4078-80]
Gallium K-edge EXAFS study of GaN:Mg films [4078-78]
High-efficiency tunneling-regenerated multi-active-region light-emitting diodes [4078-25]
High-growth-rate epitaxy of InN film by a novel-design MOCVD [4078-70]
High performances of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact [4078-112]
Hysteresis effect of pH-ISFET based on Beckman Phi 110 (Si~3N~4 gate pH-ISFET) [4078-132]