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Infrarotdetektor
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Influences of performance parameters of GaAs/AlGaAs materials on photoemission [5209-20]
Superlattices for very long wavelength infrared detectors [5209-08]
Infrared detectors: state of the art II : 24 - 25 July 1994, San Diego, California ; proceedings
Point defects in HgCdTe by deep-level transient spectroscopy (DLTS) [2274-07]
Optical refractive and reflective properties of Hg~1~-~xCd~xTe [2274-15]
Impulse coupling between laser and HgCdTe [2274-11]
Porous silicon photoemission for possible electronic and accessory applications [4795-28]
Properties of HgCdTe films [2274-12]
Infrared image sensor status (Invited Paper) [2274-22]
Extrinsic p-type doping and analysis of HgCdTe grown by molecular beam epitaxy [4795-03]
Infrared detectors for 2- to 220-m astronomy (Invited Paper) [2274-28]
Progress in far-infrared detection technology [4795-21]
Progress in MBE growth of HgCdTe at SITP [4795-05]
SWIR diodes of HgCdTe on GaAs substrates grown by metal organic vapor phase epitaxy [4795-35]