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title: IEEE; Lasers and Electro-Optics Society; LEOS '99
`Miracle' Mirror that Does Not Change the Phase of Reflected Wave
0.98 m Wavelength InGaAs/GaAs/AlGaAs Strained Quantum-Well Laser Diodes with High Reliability
1.1mumRange InGaAs VCSELs for High-Speed Optical Interconnections
1.2 mum Band High-density Multiple-wavelength Vertical Cavity Surface Emitting Laser Array
1.2 /spl mu/m band high-density multiple-wavelength vertical cavity surface emitting laser array
1.3/1.55/spl mu/m WDM transceiver modules for 155Mbps application
1.3 and 1.5 mum InP-based Vertical Cavity Surface Emitting Lasers
1.3 and 1.5 /spl mu/m InP-based vertical cavity surface emitting lasers
1.3 micron In(Ga)As/GaAs Quantum-Dot Lasers and their Dynamic Properties
1.3-mum GaInNAs VCSELs for 40-Gb/s CWDM Systems
1.3 mum High Density Quantum Dots Laser with Short Cavity and Cleaved Facet
1.3 mum InGaAs Vertical-Cavity Surface-Emitting Lasers
1.3 mum Low Threshold Al-Oxide Confined Inner Stripe (ACIS) Lasers and ACIS Laser Array
1.3mum Quantum Dot Lasers with Single and Stacked Active Layers
1.3 /spl mu/m GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate
1.3-/spl mu/m InGaAlAs MQW RWG DFB lasers for uncooled 10-Gb/s datacom applications
1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties
1.3 m GaInAsP Lasers with Bragg Reflector Consisted of Semiconductor and Air