SiO~x thin films as material for uncooled microbolometer [5065-33]
IR photodetectors on CdSb, In~4Se~3, In~4Te~3-epitaxial barrier structures [5065-17]
Electromagnetic field structure and quenching in one-dimensional photonic crystals [5065-11]
Chemical dissolution of gallium antimonide in HNO~3-HCl-CH~3COOH solutions [5065-31]
The influence of doping methods on electro-physical properties of CdTe:Mn crystals [5065-16]
Substrate influence on infrared absorption by clusters of small spheres [5065-14]
Multifunctional controlled IR-emitting element [5065-07]
Formation of low-density InAs/InP(001) quantum dot arrays [5065-27]
Defect structure and diffusion of defects in narrow-gap Hg~1~-~xCd~xTe crystals [5065-26]
Nonelastic electron scattering in HgTe [5065-13]
Electrical and optical properties of indium antimonide doped by cadmium and tellurium [5065-20]
IR photodetectors based on MBE-grown MCT layers (Invited Paper) [5065-04]
Competition of infrared detector technologies (Invited Paper) [5065-03]
Spatially nanostructured silicon for optical applications (Invited Paper) [5065-02]