Effect of pre-treatment of GaN substrate for homoepitaxial growth by rf MBE [4078-11]
Percolation and ripening in Si~1~-~xGe~x/Si(001) islands: effect of misfit strain [4078-122]
Performance improvement in XGM wavelength conversion exploiting SLAOLM [4078-52]
Shrinkage of spacing in fabricating sol-gel optical elements [4078-56]
Stress distributions in patterned-substrate InGaAs/InP [4078-99]
New concept technology: pressure-variation liquid phase epitaxy [4078-28]
Sensing characteristics of ISFET based on AIN thin film [4078-104]
Origin of the blue emission from poly(1-phenyl-2-alkynes) and poly(phenylacetylenes) [4078-41]
High performances of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact [4078-112]
Quantum dot carrier dynamics and far-infrared devices (Invited Paper) [4078-14]
Fabrication of diffractive optical elements using the CMOS process [4078-95]
Optical and transport properties of MOCVD-grown InSb thin films [4078-101]
Fabrication of a micromachined optical modulator using the CMOS process [4078-94]