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Halbleiterbauelement
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Optical Gain and Drift Velocity of Photoexcited Carriers in MQW IR Detectors
Controlling the Active Area of HgCdTe Photodiodes Using an Internal Electric Field
Gate Recess Etch Contributions to Source Resistance
Gunn Diodes Resistance Measurements by Galvanomagnetic Method
In~1~-~xTl~xSb for Long Wave-Length Infrared Photodetectors
20m Cutoff Long-Wavelength In~xGa~1~-~xAs/GaAs Quantum-Well Infrared Photodetectors
Low- and mid-spatial-frequency component measurement for aspheres [5188-37]
Advanced transmission electron microscopy for nano-optics (Invited Paper) [5188-28]
Characterization of Ag-Sb-Te alloy and its films for phase-change optical memories [5188-27]