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Infrarotdetektor
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Progress in far-infrared detection technology [4795-21]
Progress in MBE growth of HgCdTe at SITP [4795-05]
SWIR diodes of HgCdTe on GaAs substrates grown by metal organic vapor phase epitaxy [4795-35]
Infrared detectors on the basis of a-SiGe:H/c-Si heterostructures [4795-27]
Noise measurements of HgCdTe LWIR arrays with CCD readouts [4795-24]
MBE growth of HgCdTe HOT detector heterostructures [4795-16]
Study of heat-flow equation for uncooled infrared focal plane arrays [4795-34]
Electrochemical CdTe deposition for HgCdTe surface passivation [4795-20]
Optimization of signal processing in the element (SPRITE) integration and readout lengths [2274-25]
Properties of the oxidation on Hg~1~-~xCd~xTe by ellipsometry [2274-16]
Pulsed-laser-induced damage on the HgCdTe surface [2274-14]
n and k measurement of MCT and PST by polarized reflectometry [2274-13]
Monte Carlo simulations of the crosstalk in InSb matrices [2274-26]
Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes [2274-09]